Composite dummy gate with conformal polysilicon layer for FinFET device

A FinFET semiconductor device, comprising:

• a first fin structure formed over a substrate;
• a second fin structure formed over the substrate;
• a gate dielectric layer that at least partially wraps around both a segment of the first fin structure and a segment of the second fin structure, the gate dielectric layer containing a high-k gate dielectric material;
• a gate layer substantially conformally formed on the gate dielectric layer over the first fin structure, wherein a thickness of a segment of the gate layer located above the fin structure is substantially the same as a thickness of a segment of the gate layer located near a bottom of the fin structure, wherein the gate layer does not extend over the second fin structure;
• a metal gate layer formed over the gate layer and the second fin structure;
• and
• an interlayer dielectric layer feature adjacent the metal gate layer, the interlayer dielectric feature formed over the first fin-like structure and the second fin-like structure, wherein the interlayer dielectric feature comprises:
• an elongated portion, the elongated portion being positioned between and running parallel to the first fin-like structure and the second fin-like structure;
• and
• a set of perpendicularly extending portions that extend perpendicular from the elongated portion, the perpendicularly extending portions extending over the first fin-like structure and the second fin-like structure.

A semiconductor device comprising:

• a substrate;
• a first fin-like structure formed on the substrate;
• a second fin-like structure formed on the substrate;
• a gate dielectric layer formed over both the first fin-like structure and the second fin-like structure;
• a gate layer formed over a portion of the gate dielectric layer that is over the first fin-like structure, the gate layer having a substantially constant thickness;
• a first metal gate formed over the gate layer;
• a second metal gate in electrical connection with the first metal gate, the second metal gate being formed over and in direct contact with the gate dielectric layer formed over the second fin-like structure;
• and
• an interlayer dielectric layer feature adjacent the first metal gate and the second metal gate, the interlayer dielectric feature formed over the first fin-like structure and the second fin-like structure, the interlayer dielectric feature comprising:
• an elongated portion, the elongated portion being positioned between and running parallel to first fin-like structure and the second fin-like structure;
• and
• a set of perpendicularly extending portions that extend perpendicular from the elongated portion, the perpendicularly extending portions extending over the first fin-like structure and the second fin-like structure.