Method of making a conductive pillar bump with non-metal sidewall protection structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Wen Wu, Cheng-Chung Lin, Chien Ling Hwang, Chung-Shi Liu
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Abstract
A method of making a semiconductor device includes forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the UBM layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer. The method further includes forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, and the non-metal protective structure exposes the sidewalls of the UBM layer.
Claims20
A method of making a semiconductor device, the method comprising:
- forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region;
- forming a conductive pillar over the UBM layer, the conductive pillar comprising sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer;
- forming a barrier layer over the conductive pillar;
- and
- forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, the barrier layer is between the non-metal protective structure and the conductive pillar, and the non-metal protective structure exposes the sidewalls of the UBM layer.
A method of making a semiconductor device, the method comprising:
- forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising a surface region;
- forming a conductive pillar over the UBM layer, the conductive pillar comprising sidewalls and a top surface, wherein the surface region of the UBM layer is adjacent to the conductive pillar and extends perpendicular to the sidewalls of the conductive pillar;
- and
- forming a protection structure on the sidewalls of the conductive pillar and in direct contact with the surface region, wherein the protective structure comprises a protection layer and a barrier layer, and the barrier layer is between the surface region and the protection layer.
A method of making an integrated circuit device, the method comprising:
- forming at least one under bump metallurgy (UBM) layer over a substrate;
- forming a conductive pillar over the at least one UBM layer, the conductive pillar including a top surface and a sidewall surface;
- plating a solder layer on the top surface of the conductive pillar;
- depositing a protection structure over the top surface and the sidewall surface, wherein depositing the protection structure comprises depositing the protection structure over the solder layer;
- etching the protection structure to remove the protection structure over the top surface and remove a portion of the protection structure over the sidewall surface, the etched protection structure covering a surface region of the at least one UBM layer;
- and
- etching the at least one UBM layer to remove portions of the at least one UBM layer extending beyond the surface region.
Dependencies are inferred from the claim text.