Contact structure and formation thereof

A semiconductor device comprising:

• a silicide;
• a dielectric layer;
• a metal layer in contact with a sidewall of the dielectric layer and in contact with a top surface of the silicide;
• a second dielectric layer in contact with the metal layer;
• a glue layer in contact with the second dielectric layer;
• and
• an annealed cobalt plug over the silicide, the annealed cobalt plug comprising a repaired lattice structure, the second dielectric layer and the glue layer between the metal layer and the annealed cobalt plug.

A method of forming a semiconductor device comprising:

• lining an opening with metal, the opening at least partially defined by a dielectric;
• performing a first annealing operation to form a silicide from the metal;
• forming a second dielectric in the opening after forming the silicide;
• etching the second dielectric to form a second opening over the silicide;
• forming a cobalt plug in the second opening over the silicide;
• and
• performing a second annealing operation on the cobalt plug at a first temperature while exposing the cobalt plug to a first gas to form an annealed cobalt plug.