Back to results
US 9,287,169 B2Granted
Method for fabricating a semiconductor device having buried bit lines
AssigneeSK hynix Inc.
InventorsJu-Hyun Myung, Eui-Seong Hwang, Eun-Shil Park, Tae-Yoon Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.
Claims13
A method for fabricating a semiconductor device, comprising:
- forming a pair of body lines that is separated by a trench;
- etching both sidewalls of a lower portion of the trench and forming recessed sidewalls that face each other;
- forming a barrier layer containing germanium, on the recessed sidewalls;
- and
- forming a pair of separated buried bit lines including a metal silicide, in the trench.
2 more elements
A method for fabricating a semiconductor device, comprising:
- forming a plurality of active regions that are separated from one another by a plurality of first trenches;
- forming supporters that fill the first trenches;
- defining preliminary second trenches that bisect the plurality of active regions;
- etching both sidewalls of lower portions of the preliminary second trenches and defining second trenches that have recessed sidewalls facing each other;
- forming a barrier layer containing germanium, on the recessed sidewalls;
- and
- forming pairs of separated buried bit lines including a metal silicide, in the second trenches.
4 more elements
Dependencies are inferred from the claim text.