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US 9,287,159 B2Granted
Memory device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Chul Kim, Jae-Seok Kim, Chan-Hong Park
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Abstract
A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.
Claims7
A method of manufacturing a memory device, comprising:
- forming a device isolation trench in a field region of a substrate, the field region defining an active region of the substrate;
- forming a device isolation layer in the device isolation trench of the substrate, the device isolation layer including,
- a first insulation layer in a lower portion of the device isolation trench, the first insulation layer including a first void,
- a second insulation layer in an upper portion of the device isolation trench, the second insulation layer including a second void, and
- a separation layer between the first insulation layer and the second insulation layer;
- forming a gate structure on the active region of the substrate;
- forming an impurity layer on the active region and adjacent to the gate structure;
- and
- forming a conductive interconnector contacting the impurity layer.
6 more elements
Dependencies are inferred from the claim text.