Heating device
AssigneeNGK Insulators, Ltd.
InventorsNobuyuki Kondo, Morimichi Watanabe, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
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Abstract
A heating apparatus 1A includes a susceptor part 9A having a heating face 9a of heating a semiconductor W, and a ring shaped part 6A provided in the outside of the heating face 9a. The ring shaped part 6A is composed of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray.
Claims18
A heating apparatus comprising a susceptor and a ring shaped part, said susceptor comprising a substrate and a dielectric layer provided on an upper face of said substrate and having a heating face of heating a semiconductor, and said ring shaped part being provided on said upper face of said substrate and in an outer periphery of said dielectric layer;
- wherein said ring shaped part comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components;
- wherein said ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray;
- and
- wherein said ceramic material comprises a sub phase comprising a crystal phase of MgO—AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.
A ring shaped part mounted on an upper face of a substrate and provided in an outer periphery of a dielectric layer having a heating face of heating a semiconductor,
- wherein said ring shaped part comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components;
- wherein said ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° taken by using CuKα ray;
- and
- wherein said ceramic material comprises a sub phase comprising a crystal phase of MgO—AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.
Dependencies are inferred from the claim text.