Phase changing on-chip thermal heat sink
AssigneeInternational Business Machines Corporation
InventorMattias E. Dahlstrom
Life of this patent
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Abstract
A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
Claims14
A semiconductor structure, comprising:
- a device on a substrate of an integrated circuit chip;
- and
- a heat sink proximate to the device,
- wherein the heat sink comprises a core composed of a phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip,
- the heat sink comprises a liner that encapsulates the core,
- the substrate is composed of a semiconductor material comprising silicon, and
- the heat sink is completely contained in one or more insulator layers over the device,
- further comprising electrically conductive elements in the one or more insulator layers that provide an electrically conductive pathway to the device.
A semiconductor structure, comprising:
- a device on a substrate of an integrated circuit chip;
- and
- a heat sink proximate to the device,
- wherein:
- the heat sink comprises a core composed of a phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip;
- the heat sink comprises a liner that encapsulates the core;
- the liner comprises a dielectric material;
- the device comprises power transistor;
- and
- an emitter contact of the power transistor extends vertically out of the power transistor and contacts the liner.
A semiconductor structure, comprising:
- a device on a substrate of an integrated circuit chip;
- and
- a heat sink proximate to the device,
- wherein the heat sink comprises a core composed of a phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip,
- the heat sink comprises a liner that encapsulates the core, and
- the heat sink is completely contained in one or more insulator layers over the device, and further comprising:
- an upper insulator layer formed on the one or more insulator layers;
- an external heat sink on the upper insulator layer;
- and
- at least one thermal link formed in the upper insulator layer and contacting the heat sink and the external heat sink.
A semiconductor structure, comprising:
- a device on a substrate of an integrated circuit chip;
- and
- a heat sink proximate to the device,
- wherein the heat sink comprises a core composed of a phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip, and
- the heat sink comprises a through-silicon-via that extends completely through the substrate.
Dependencies are inferred from the claim text.