FinFET field-effect transistors with atomic layer doping

A multigate field-effect transistor device comprising:

• a gate structure that envelops a plurality of surfaces of at least one fin that are above a substrate;
• and
• the at least one fin, wherein the at least one fin provides a channel between a source and the gate structure and between a drain and the gate structure, the at least one fin having a maximum dimension of 30 nm,
• wherein the at least one fin is composed of a semiconducting material and at least one monolayer of dopant atoms that conformally overlays the semiconducting material in three-dimensions so a conformal thickness of 5 nm or less of said at least one monolayer of dopant atoms is present on an upper surface and sidewall surfaces of the at least one fin, wherein a lattice structure of the at least one monolayer of dopant atoms substantially match a lattice structure of the semiconductor material;
• and
• wherein the at least one monolayer of dopant atoms includes at least 4×1020 active dopant atoms per cm3 that are bonded with atoms on a surface of the semiconducting material such that bonding between the active dopant atoms and the atoms on the surface of the semiconducting material increases the conductivity of the surface of the semiconducting material.