Multi-selective polishing slurry composition and a semiconductor element production method using the same

A method for producing a semiconductor device, the method comprising:

• forming device patterns including a silicon film at the uppermost part of the device patterns on a substrate including a first area and a second area, the device patterns on the first area having a density higher than that of the device patterns on the second area;
• forming a first silicon oxide film on the device patterns;
• forming a silicon nitride film on the silicon oxide film;
• forming a second silicon oxide film on the silicon nitride film;
• and
• chemically mechanically polishing the second silicon oxide film, the silicon nitride film, and the first silicon oxide film using one polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent, and a silicon film passivation agent until the silicon film is exposed;
• wherein the polishing slurry composition is a mixture of 100 arts by weight of polishing agent suspension, 40 to 120 parts by weight of an additive solution, and 50 to 700 parts by weight of a diluent;
• and
• wherein the additive solution contains 100 parts by weight of a solvent, 0.01 to 0.1 parts by weight of the silicon nitride film passivation agent, and 0.1 to 0.3 parts by weight of the silicon film passivation agent.