Methods of patterning line-type features using a multiple patterning process that enables the use of tighter contact enclosure spacing rules

A method of patterning a plurality of line-type features, comprising:

• identifying an overall target cut mask to be used in patterning said plurality of line-type features to be formed above a semiconductor substrate, wherein said overall target cut mask comprises a target non-rectangular opening feature having an inner, concave corner;
• forming said plurality of line-type features above said semiconductor substrate;
• forming a first patterned photoresist cut mask corresponding to a first sub-target pattern of said overall target cut mask, wherein said first patterned photoresist cut mask comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of said target non-rectangular opening feature;
• patterning at least one of said plurality of line-type features by performing at least one first etching process through said first patterned photoresist cut mask;
• after performing said at least one first etching process, removing said first patterned photoresist etch mask;
• forming a second patterned photoresist cut mask corresponding to a second sub-target pattern of said overall target cut mask pattern, wherein said second patterned photoresist cut mask comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of said target non-rectangular opening feature, wherein said first and second rectangular-shaped openings have an area of overlap at a location corresponding to a location of said inner, concave corner in said overall target cut mask;
• patterning at least one of said plurality of line-type features by performing at least one second etching process through said second patterned photoresist cut mask;
• after performing said at least one second etching process, removing said second patterned photoresist etch mask;
• and
• forming a contact that is conductively coupled to said at least one of said plurality of line-type features that were patterned during at least one of said first and second etching processes, wherein said contact is formed at a location that is based upon a contact-to-end-of-cut-line spacing rule that is based upon a spacing between one of said first and second rectangular-shaped openings and a nearest edge of said contact.

A method, comprising:

• identifying a pattern for an overall target cut mask to be used in patterning a plurality of line-type features to be formed above a semiconductor substrate, wherein said overall target cut mask comprises a target non-rectangular opening feature having an inner, concave corner;
• decomposing said overall target cut mask pattern into a first sub-target pattern and a second sub-target pattern, wherein said first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of said target non-rectangular opening feature and said second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of said target non-rectangular opening feature, said first and second openings having an area of overlap at a location corresponding to a location of said inner, concave corner in said overall target cut mask;
• generating a first set of mask data corresponding to said first sub-target pattern;
• and
• generating a second set of mask data corresponding to said second sub-target pattern.