Method for single fin cuts using selective ion implants

A method comprising:

• forming a hard mask layer above a substrate;
• forming a plurality of fin elements above said hard mask layer;
• forming a mask layer above said fin elements, said mask layer having an opening defined above at least one selected fin element of said plurality of fin elements;
• implanting an ion species into said at least one selected fin element through said opening to increase its etch characteristics relative to the other fin elements;
• removing said at least one selected fin element selectively relative to said other fin elements;
• transferring a pattern defined by the remaining fin elements to said hard mask layer to define a patterned hard mask layer;
• and
• etching said substrate using said patterned hard mask layer as an etch mask to define a plurality of fins in said substrate.

A method, comprising:

• forming a plurality of fins in a substrate, said fins comprising semiconductor material;
• forming a mask above said fins, said mask having an opening defined above at least one selected fin of said plurality of fins;
• implanting an ion species into said at least one selected fin through said opening to increase its etch characteristics relative to the other fins;
• and
• removing said at least one selected fin selectively relative to said other fins.