Polishing of small composite semiconductor materials
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJennifer M. Hydrick, James Fiorenza
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Abstract
A device includes a crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by using a planarization process configured with a selectivity of the crystalline material to the insulator greater than one. In a preferred embodiment, the planarization process uses a composition including abrasive spherical silica, H2O2 and water. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.
Claims20
A method comprising:
- providing a substrate comprising a first semiconductor crystalline material;
- providing an insulator having an opening to the substrate;
- forming a second semiconductor crystalline material within the opening in the insulator, the second semiconductor crystalline material being lattice-mismatched with the first semiconductor crystalline material;
- and
- planarizing top surfaces of the insulator and second semiconductor crystalline material to be coplanar within 20 nm.
A method comprising:
- defining an opening through an insulator to a substrate, the substrate comprising a first semiconductor crystalline material;
- forming a second semiconductor crystalline material within the opening, the second semiconductor crystalline material being lattice-mismatched with the first semiconductor crystalline material;
- and
- planarizing top surfaces of the insulator and second semiconductor crystalline material by using a chemical mechanical polishing using a slurry having a selectivity ratio of second semiconductor crystalline material to insulator that is greater than 1:1.
A method comprising:
- defining an opening through an insulator to a substrate, the substrate comprising a first semiconductor crystalline material;
- forming a second semiconductor crystalline material within the opening, the second semiconductor crystalline material being lattice-mismatched with the first semiconductor crystalline material;
- and
- planarizing top surfaces of the insulator and second semiconductor crystalline material by using a chemical mechanical polishing using a slurry comprising a hydrogen peroxide (H2O2) solution.
Dependencies are inferred from the claim text.