Method of etching a boron doped carbon hardmask
AssigneeApplied Materials, Inc.
InventorsByungkook Kong, Jun Wan Kim, Wonmo Ahn, Jeong Hyun Yoo, Hun Sang Kim
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Abstract
In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.
Claims17
A method for etching a boron doped amorphous carbon hardmask layer, comprising:
- flowing a process gas comprising Cl2, CH4, SF6, and O2 into a processing chamber;
- forming a plasma in the processing chamber from the process gas;
- etching the boron doped amorphous carbon hardmask layer in the presence of the plasma;
- and
- forming a polymer coating on sidewalls of a feature etched into the boron doped amorphous carbon hardmask layer with the process gas.
A method for etching a boron doped amorphous carbon hardmask layer, comprising:
- flowing a process gas comprising CH4, Cl2, SF6 and O2 into a processing chamber;
- forming a plasma in the processing chamber from the process gas;
- etching a high aspect ratio feature in the boron doped amorphous carbon hardmask layer in the presence of the plasma having a profile angle formed between a sidewall of the high aspect ratio feature and a plane of the opening in the boron doped amorphous carbon hardmask layer greater than 89 degrees;
- and
- forming a polymer coating on sidewalls of a feature etched into the boron doped amorphous carbon hardmask layer with the process gas.
Dependencies are inferred from the claim text.