SIC epitaxial wafer and method for manufacturing same

A method of manufacturing a SiC epitaxial wafer provided with a 4H—SiC single crystal epitaxial layer on a 4H—SiC single crystal substrate having an off angle, comprising:

• a step of determining a ratio of basal plane dislocations (BPD) and threading screw dislocations (TSD), which cause carrot defects in a 4H—SiC epitaxial film of a prescribed thickness which is formed on a 4H—SiC single crystal substrate having an off angle, to all basal plane dislocations and all threading screw dislocations which are present on a growth surface of the 4H—SiC single crystal substrate,
• a step of determining an upper limit of surface density of BPD and TSD on the growth surface of a 4H—SiC single crystal substrate used based on the above ratio, and
• a step of preparing a 4H—SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a 4H—SiC epitaxial film on the 4H—SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

A SiC epitaxial wafer provided with a 4H—SiC single crystal epitaxial layer on a 4H—SiC single crystal substrate having an off angle, wherein the surface density of stacking faults caused by BPD of the 4H—SiC single crystal substrate is 0.1 stacking faults/cm2 or less in the 4H—SiC epitaxial film.