Manufacturing method of semiconductor substrate and semiconductor device

A manufacturing method of a semiconductor substrate comprising:

• forming a first oxide semiconductor over a first substrate;
• forming a first insulator over the first oxide semiconductor;
• injecting an ion into a region of the first oxide semiconductor through the first insulator;
• bonding a surface of the first insulator over the first substrate to a surface of a second insulator over a second substrate, the second substrate comprising a semiconductor element and the second insulator over the semiconductor element;
• performing a heat treatment in a state where the first substrate and the second substrate are bonded each other;
• and
• separating the first substrate from the second substrate along the region of the first oxide semiconductor to form a second oxide semiconductor and the semiconductor element over the second substrate.

A manufacturing method of a semiconductor substrate comprising:

• forming a first oxide semiconductor over a first substrate;
• forming a first insulator over the first oxide semiconductor;
• injecting an ion into a region of the first oxide semiconductor through the first insulator;
• bonding a surface of the first insulator over the first substrate to a surface of a second insulator over a second substrate;
• performing a heat treatment in a state where the first substrate and the second substrate are bonded each other;
• separating the first substrate from the second substrate along the region of the first oxide semiconductor to form a second oxide semiconductor over the second substrate;
• and
• forming a semiconductor element including the second oxide semiconductor.

A manufacturing method of a semiconductor substrate comprising:

• forming a first oxide semiconductor over a first substrate;
• forming a first insulator over the first oxide semiconductor;
• injecting an ion into a region of the first oxide semiconductor through the first insulator;
• bonding a surface of the first insulator over the first substrate to a surface of a second insulator over a second substrate, the second substrate comprising a first semiconductor element and the second insulator over the first semiconductor element;
• performing a heat treatment in a state where the first substrate and the second substrate are bonded each other;
• separating the first substrate from the second substrate along the region of the first oxide semiconductor to form a second oxide semiconductor and the first semiconductor element over the second substrate;
• and
• forming a second semiconductor element including the second oxide semiconductor.