Method of forming multilayer graphene structure
AssigneesSamsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
InventorsHwansoo Suh, Insu Jeon, Young-jae Song, Qinke Wu, Seong-jun Jung
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Abstract
According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.
Claims16
A method of forming a multilayer graphene structure, the method comprising:
- forming a sacrificial layer including a plurality of hexagonal boron nitride (h-BN) films on a growth substrate;
- growing a first epitaxial graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, the growing the first epitaxial graphene layer including removing an uppermost part of the h-BN films to leave remaining h-BN films;
- forming a second epitaxial graphene layer on an upper surface of the remaining h-BN films using the CVD method, and removing an uppermost part of the remaining h-BN films under the first graphene layer during the forming the second graphene layer using the CVD method;
- and
- forming a third epitaxial graphene layer by epitaxially growing the third epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the second epitaxial graphene layer is on the third epitaxial graphene layer.
A method of forming a multilayer graphene structure, the method comprising:
- forming N sacrificial films on a growth substrate,
- the N sacrificial films stacked on each other,
- N being an integer greater than 1;
- forming M graphene layers on the growth substrate using a chemical vapor deposition (CVD) method,
- M being an integer greater than 1 and less than or equal to N,
- the M graphene layers including a (M-1)th graphene layer,
- the forming M graphene layers including removing at least an uppermost part of the N sacrificial films under the (M-1)th graphene layer while forming the Mth graphene layer during the CVD method and a number of the graphene layers formed during the forming M graphene layers is controlled based on a quantity of the sacrificial films formed during the forming N sacrificial films.
Dependencies are inferred from the claim text.