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US 9,287,113 B2Granted
Methods for depositing films on sensitive substrates
AssigneeNovellus Systems, Inc.
InventorsHu Kang, Shankar Swaminathan, Adrien LaVoie, Jon Henri
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AssigneeNovellus Systems, Inc.
InventorsHu Kang, Shankar Swaminathan, Adrien LaVoie, Jon Henri
Estimating the term…
Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.
A method of forming a silicon oxide material or silicon nitride material on an exposed surface of an oxidation-sensitive and/or nitridation-sensitive substrate in a single-station or multi-station reaction chamber, the method comprising:
A method of forming a silicon oxide or silicon nitride material on an exposed surface of a substrate, comprising:
Dependencies are inferred from the claim text.