Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof

Abstract

The present invention relates to the field of liquid crystal displaying techniques, and in particular to a preparation method of low-temperature polysilicon thin film, including: growing a buffer layer and then an amorphous silicon layer on the substrate; heating up an amorphous silicon layer to reach a temperature higher than room temperature, and performing pre-cleaning on the amorphous silicon layer; and using excimer laser annealing (ELA) to radiate on the pre-cleaned amorphous silicon layer in previous step to transform the amorphous silicon into polysilicon. The present invention further provides a manufacturing system of low-temperature polysilicon thin film. By improving the manufacturing system of the low-temperature polysilicon thin film and pre-cleaning method, the present invention improves thickness non-uniformity of the amorphous silicon layer and the uniformity of the polysilicon layer transformed in the subsequent step of ELA radiation.

Dependencies are inferred from the claim text.