Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process

A non-transitory computer readable medium storing a program for controlling a semiconductor manufacturing apparatus, the program causing an information processing apparatus, when mounted thereon, to execute operations of:

• detecting an emission spectrum of light in a visible wavelength region emitted in the semiconductor manufacturing apparatus;
• calculating particle density by performing simulation based on a differential equation for the particle density;
• calculating emission intensity at each wavelength in a visible wavelength region based on the calculated particle density;
• obtaining an electron energy distribution function by comparing the calculated emission intensity at each wavelength in the visible wavelength region with the detected emission spectrum with reference to information on emission species and an emission wavelength in a target manufacturing process;
• predicting an emission spectrum of light emitted in the semiconductor manufacturing apparatus in an ultraviolet wavelength region by calculating emission intensity at each wavelength in the ultraviolet wavelength region by using the electron energy distribution function and a reaction cross-sectional area relating to the emission species;
• predicting the damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region;
• and
• controlling process conditions of the semiconductor manufacturing apparatus based on the predicted damage amount.

A semiconductor manufacturing apparatus comprising:

• a chamber in which a wafer is disposed;
• a sensor that detects an emission spectrum of light emitted in a visible wavelength region inside the chamber;
• and
• a calculation unit that:
• calculates particle density by performing simulation based on a differential equation for the particle density,
• calculates emission intensity at each wavelength in the visible wavelength region based on the calculated particle density,
• obtains an electron energy distribution function by comparing the calculated emission intensity at each wavelength in the visible wavelength region with the detected emission spectrum, with reference to information on emission species and an emission wavelength in a target, manufacturing process,
• predicts an emission spectrum in an ultraviolet wavelength region by using the electron energy distribution function and a reaction cross-sectional area relating to the emission species,
• predicts a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region, and
• calculates target process conditions inside the chamber based on the damage amount,
• wherein process conditions inside the chamber are set so as to meet the target process conditions that have been calculated by the calculation unit.

A method for controlling a semiconductor manufacturing device, the method comprising:

• obtaining an equation for predicting emission intensity at each wavelength in an ultraviolet wavelength region that has been associated with an emission spectrum in a visible wavelength region, the equation having been calculated based on multivariable analysis;
• detecting an emission spectrum of light emitted in the semiconductor manufacturing apparatus in the visible wavelength region;
• predicting an emission spectrum of light emitted in the semiconductor manufacturing apparatus in the ultraviolet wavelength region by using the calculated predicting equation and the detected emission spectrum;
• predicting the damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region;
• and
• controlling process conditions of the semiconductor manufacturing apparatus based on the predicted damage amount.

A non-transitory computer readable medium storing a program for controlling a semiconductor manufacturing device, the program causing an information processing apparatus, when mounted thereon, to execute operations of:

• obtaining an equation tier predicting emission intensity at each wavelength in an ultraviolet wavelength region that has been associated with an emission spectrum in a visible wavelength region, the equation having been calculated based on multivariable analysis;
• detecting an emission spectrum of light emitted in the semiconductor manufacturing apparatus in the visible wavelength region;
• predicting an emission spectrum of light emitted in the semiconductor manufacturing apparatus in the ultraviolet wavelength region by using the calculated predicting equation and the detected emission spectrum;
• and
• predicting a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region;
• and
• controlling process conditions of the semiconductor manufacturing apparatus based on the predicted damage amount.

A semiconductor manufacturing apparatus comprising:

• a chamber in which a wafer is disposed;
• a sensor that detects an emission spectrum of light emitted in a visible wavelength region inside the chamber;
• a calculation unit that:
• obtains an equation for predicting emission intensity at each wavelength in an ultraviolet wavelength region that has been associated with an emission spectrum in a visible wavelength region, the equation having been calculated based on multivariable analysis;
• predicts an emission spectrum in an ultraviolet wavelength region by using the equation and the detected emission spectrum,
• predicts a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region, and
• calculates target process conditions inside the chamber based on the damage amount;
• and
• wherein process conditions inside the chamber are set so as to meet the target process conditions that have been calculated by the calculation unit.