Semiconductor circuit
AssigneeKabushiki Kaisha Toshiba
InventorTakahiro Ikeda
Life of this patent
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Abstract
An inspection device includes first and second electro-optical systems, a first detector, and a shape calculation unit. The first electro-optical system irradiates an object to be inspected with a first electron beam to cause an irradiation mark to be placed on the object to be inspected. The second electro-optical system irradiates the object to be inspected with a second electron beam. The first detector detects a secondary electron generated from the object to be inspected in response to the irradiation by the second electron beam, and outputs a first signal based on the irradiation mark. The shape calculation unit calculates a three-dimensional shape of the object to be inspected based on the first signal, an irradiation direction of the first electron beam, and an irradiation direction of the second electron beam.
Claims20
An inspection device comprising:
- a first electro-optical system configured to irradiate an object to be inspected with a first electron beam to cause an irradiation mark to be placed on the object to be inspected;
- a second electro-optical system configured to irradiate the object to be inspected with a second electron beam;
- a first detector configured to detect a secondary electron generated from the object to be inspected in response to the irradiation by the second electron beam, and output a first signal based on the irradiation mark;
- and
- a shape calculation unit configured to calculate a three-dimensional shape of the object to be inspected based on the first signal, an irradiation direction of the first electron beam, and an irradiation direction of the second electron beam.
An inspection device comprising:
- a first electro-optical system configured to irradiate an object to be inspected with a first electron beam;
- a substantially flat member which is arranged at a position where the first electron beam which is reflected on a surface of the object to be inspected is focused;
- a detector configured to detect a secondary electron generated when the reflected first electron beam becomes incident on the substantially flat member and output a first signal;
- and
- a shape calculation unit configured to acquire a first lattice image by processing the first signal, calculate an amount of distortion in the first lattice image relative to a reference lattice image, and calculate a three-dimensional shape of the object to be inspected from the amount of distortion.
An inspection method comprising:
- marking an object to be inspected by irradiating the object with a first electron beam;
- irradiating the object to be inspected with a second electron beam;
- detecting a secondary electron generated from the object to be inspected in response to the irradiation by the second electron beam, and outputting a first signal based on the irradiation mark;
- and
- calculating a three-dimensional shape of the object to be inspected based on the first signal, an irradiation direction of the first electron beam, and an irradiation direction of the second electron beam.
Dependencies are inferred from the claim text.