Processing apparatus and method of treating a substrate
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsErnest E. Allen, Jon Ballou, Kevin M. Daniels, James P. Buonodono, Joseph P. Dzengeleski
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Abstract
A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.
Claims17
A processing apparatus comprising:
- a process chamber;
- a plasma source disposed within the process chamber and mounted on a vertically movable carriage for moving the plasma source in a first, vertical direction, the movable carriage including a first shaft and a second shaft disposed on opposite sides of the plasma source, the first shaft and the second shaft extending through a first air bearing and a second air bearing, respectively, the plasma source being movable in a first direction and configured to emit an ion beam along a second direction orthogonal to the first direction;
- a platen disposed within the process chamber for supporting a substrate;
- and
- an ion beam current sensor disposed adjacent to the platen.
A method for processing a substrate using an ion beam, comprising:
- scanning a plasma source in a first direction;
- emitting the ion beam from the plasma source toward the substrate along a second direction that is orthogonal to the first direction;
- measuring a beam current of the ion beam by vertically scanning the plasma source adjacent an ion beam current sensor;
- and
- controlling a processing parameter based on the measuring the beam current.
Dependencies are inferred from the claim text.