Three terminal fuse with FinFET
AssigneeInternational Business Machines Corporation
InventorsDerrick Liu, Chun-Chen Yeh
Life of this patent
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Abstract
A technique is provided for programming a transistor having a source, a drain, a gate, and a channel region between the source and the drain. The gate is above dielectric above the channel region. A gate voltage is about equal to or greater than a breakdown voltage of the gate dielectric in order to break down the gate dielectric into a breakdown state. Current flows between the source and the drain as a result of breaking down the gate dielectric. In response to the transistor being programmed, the current flowing between the source and the drain is not based on the gate voltage at the gate.
Claims19
A method for programming a transistor having a source, a drain, a gate, a channel region between the source and the drain, and a gate dielectric above the channel region, the method comprising:
- applying a gate voltage about equal to or greater than a breakdown voltage of the gate dielectric in order to break down the gate dielectric into a breakdown state;
- and
- causing current to flow between the source and the drain as a result of breaking down the gate dielectric;
- wherein, in response to the transistor being programmed, the current flowing between the source and the drain is not based on the gate voltage at the gate.
A method of programming a plurality of transistors, the method comprising:
- configuring the plurality of transistors in an arrangement, each of the plurality of transistors having a source, a drain, and a gate, wherein a channel region is between the source and the drain, wherein a gate dielectric is above the channel region;
- programming certain ones of the plurality of transistors by:
- applying a gate voltage about equal to or greater than a breakdown voltage of the gate dielectric in order to break down the gate dielectric into a breakdown state;
- and
- causing current to flow between the source and the drain as a result of breaking down the gate dielectric;
- wherein, in response to the certain ones of the plurality of transistors being programmed, the current flowing between the source and the drain of the certain ones of the plurality of transistors is not based on the gate voltage at the gate.
Dependencies are inferred from the claim text.