Determining read voltages for reading memory

A data storage device comprising:

• a non-volatile memory having a three-dimensional (3D) configuration and circuitry associated with operation of memory cells of the non-volatile memory;
• and
• a controller configured to identify a first set of storage elements of a first word line of the memory cells of the non-volatile memory that satisfy a condition, wherein the condition is based on one or more states of one or more storage elements, to determine a first read voltage corresponding to the first set of storage elements of the first word line and to determine a second read voltage corresponding to a second set of storage elements of the first word line that do not satisfy the condition,
• wherein the controller is configured to identify the first set of storage elements by reading data from one or more word lines into one or more latches in the data storage device and performing one or more bitwise logical operations to the data in the one or more latches to generate flag data that includes one or more bits, each of the one or more bits corresponding to one of the storage elements of the first word line, and
• wherein the controller is configured to read first data from the first word line by applying the first read voltage to the first set of storage elements of the first word line and applying the second read voltage to the second set of storage elements of the first word line.

A data storage device comprising:

• a non-volatile memory having a three-dimensional (3D) configuration and circuitry associated with operation of memory cells of the non-volatile memory;
• and
• a controller configured to identify a first set of storage elements of a first word line of the memory cells of the non-volatile memory that satisfy a condition, wherein the condition is based on one or more storage elements, to determine a first read voltage corresponding to the first set of storage elements of the first word line and to determine a second read voltage corresponding to a second set of storage elements of the first word line,
• wherein the controller is configured to identify the first set of storage elements by reading data from one or more word lines into one or more latches in the data storage device and performing one or more bitwise logical operations to the data in the one or more latches to generate flag data that includes one or more bits, each of the one or more bits corresponding to one of the storage elements of the first word line, and
• wherein the controller is configured to apply the first read voltage to the first set of storage elements of the first word line and to apply the second read voltage to the second set of storage elements of the first word line.