Storage device, nonvolatile memory and method operating same
AssigneeSamsung Electronics Co., Ltd.
InventorsChul Lee, Nam Wook Kang, In Hwan Doh, Chanik Park
Life of this patent
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Abstract
A method of operating a storage device includes; counting a number of fast cycles for the memory block when a program interval between two successive program operations directed to memory cells of the memory block is less than a minimal program interval, and/or when an erase interval between two successive erase operations directed to the memory block is less than a minimal erase interval, and selecting the memory block to be erased by an erase operation or selecting memory cells of the memory block to be programmed by a program operation in response to the counted number of fast cycles for the memory block.
Claims20
A method of operating a storage device including a memory controller and a nonvolatile memory including a memory block, the method comprising:
- counting a number of fast cycles for the memory block when a program interval between two successive program operations directed to memory cells of the memory block is less than a minimal program interval, and/or when an erase interval between two successive erase operations directed to the memory block is less than a minimal erase interval;
- and
- selecting the memory block to be erased by an erase operation or selecting memory cells of the memory block to be programmed by a program operation in response to the counted number of fast cycles for the memory block.
A method of operating a storage device including a memory controller and a nonvolatile memory including a plurality of memory blocks, the method comprising:
- respectively counting a number of fast cycles for each one of the plurality of memory blocks when a program interval between two successive program operations directed to memory cells of each memory block is less than a minimal program interval, and/or when an erase interval between two successive erase operations directed to each of the memory blocks is less than a minimal erase interval;
- calculating a wear index for each one of the plurality of memory blocks based on the counted number of fast cycles for each one of the plurality of memory blocks, and a number of erase operations directed to each one of the plurality of memory blocks;
- and
- selecting a memory block from among the plurality of memory blocks to be erased by an erase operation or selecting memory cells of the memory block to be programmed by a program operation in response to the counted number of fast cycles for the selected memory block.
A method of operating a nonvolatile memory device having a memory cell array divided into memory blocks, the method comprising:
- counting a number of fast cycles for each one of the memory blocks when a program interval between two successive program operations directed to memory cells of each memory block is less than a minimal program interval, and/or when an erase interval between two successive erase operations directed to each memory block is less than a minimal erase interval;
- and
- selecting a memory block among the memory blocks to be erased by an erase operation or selecting memory cells of the memory block to be programmed by a program operation in response to the counted number of fast cycles for the memory block.
Dependencies are inferred from the claim text.