Data writing method, and memory control circuit unit and memory storage apparatus using the same

A memory control circuit unit, for writing data to a memory cell of a rewritable non-volatile memory module of a memory storage apparatus, the memory control circuit unit comprises:

• a host interface configured to be coupled to a host system;
• a memory interface configured to be coupled to the rewritable non-volatile memory module;
• and
• a memory management circuit coupled to the host interface and the memory interface;
• and
• a thermal sensor coupled to the memory management circuit and configured to detect an operating temperature of the memory storage apparatus,
• wherein the memory management circuit is configured to determine whether the operating temperature of the memory storage apparatus is larger than a predetermined temperature,
• wherein the memory management circuit is configured to adjust at least one predetermined operation parameter corresponding to the rewritable non-volatile memory module to generate at least one adjusted operation parameter corresponding to the rewritable non-volatile memory module and give a command sequence for writing the data into the memory cell based on the at least one adjusted operation parameter to the rewritable non-volatile memory module if the operating temperature of the memory storage apparatus is larger than the predetermined temperature,
• wherein the at least one adjusted operation parameter is configured to adjust a number of a plurality of electrons to be injected to the memory cell corresponding to the data to prevent an error bit caused by an over-writing.

A memory storage apparatus, comprising:

• a connection interface unit, configured to be coupled to a host system;
• a rewritable non-volatile memory module;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to detect an operating temperature of the memory storage apparatus,
• wherein the memory control circuit unit is further configured to determine whether the operating temperature is larger than a predetermined temperature,
• wherein the memory control circuit unit is further configured to adjust at least one predetermined operation parameter corresponding to the rewritable non-volatile memory module to generate at least one adjusted operation parameter corresponding to the rewritable non-volatile memory module and give a command sequence for writing data into a memory cell of the rewritable non-volatile memory module based on the at least one adjusted operation parameter to the rewritable non-volatile memory module if the operating temperature of the memory storage apparatus is larger than the predetermined temperature,
• wherein the at least one adjusted operation parameter is configured to adjust a number of a plurality of electrons to be injected to the memory cell corresponding to the data to prevent an error bit caused by an over-writing.