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US 9,286,983 B2Granted
Memory string and semiconductor device including the same
AssigneeSK hynix Inc.
InventorsSung Wook Jung, Dong Kee Lee, Hyun Seung Yoo, Yu Jin Park
Life of this patent
Estimating the term…
Abstract
A memory string includes a pass transistor, first memory cells connected in series to a drain terminal of the pass transistor, and first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series. Here, ‘k’ denotes an integer that is equal to or greater than ‘2’.
Claims7
A memory string comprising:
- a pass transistor;
- first memory cells connected in series to a drain terminal of the pass ransistor;
- and
- first to kth memory cell groups connected in parallel to a source terminal of the pass transistor and each including a plurality of second memory cells connected in series, wherein k denotes an integer that is equal to or greater than ‘2’.
1 more element
Dependencies are inferred from the claim text.