Apparatuses and methods for detecting write completion for resistive memory

A system, comprising:

• a processor;
• a controller coupled to the processor to input/output data processed by the processor;
• and
• a memory coupled to the processor, the memory comprises:
• a memory cell coupled to a conductive line;
• a first driver with a first resistance and a second driver with a second resistance, coupled to the conductive line, to drive current for the memory cell during a write operation, wherein the first resistance is smaller than the second resistance;
• and
• a write completion detection circuit to selectively deactivate the first driver during two or more time periods to detect a write completion of the memory cell based on a voltage change on the conductive line, wherein the write completion detection circuit comprises:
• a first sense capacitor, coupled to the conductive line, to store information of a first voltage in response to a first sense pulse;
• a second sense capacitor, coupled to the conductive line, to store information of a second voltage in response to a second sense pulse;
• and
• a comparator, coupled to the first and second sense capacitors, to compare the information of the first voltage with the information of the second voltage to detect the write completion for the memory cell.

A method, comprising:

• weakening a write driver on a conductive line of a memory cell for a first time period;
• sensing a first voltage on the conductive line while the write driver is weakened for the first time period;
• weakening the write driver for a second time period after the first time period;
• sensing a second voltage on the conductive line while the write driver is weakened for the second time period;
• and
• determining a completion of a write operation in the memory cell based on a comparison of a difference between the first voltage and the second voltage with a predetermined threshold, wherein the predetermined threshold is about 100 milliVolts (mV).