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US 9,286,964 B2Granted
Method, apparatus and system for responding to a row hammer event
AssigneeIntel Corporation
InventorsJohn B. Halbert, Kuljit S. Bains
Life of this patent
Estimating the term…
Abstract
Techniques and mechanisms to facilitate an operational mode of a memory device to prepare for a targeted refresh of a row in memory. In an embodiment, the memory device performs one or more operations while in the mode to prepare for a future command from a memory controller, the command to implement, at least in part, a targeted refresh of a row in a first bank of the memory device. Prior to such a command, the memory device services another command from the memory controller. In another embodiment, servicing the other command includes the memory device accessing a second bank of the memory device while the memory device operates in the mode, and before completion of an expected future targeted row refresh.
Claims28
A memory device comprising:
- a first bank including a first row and a second row physically adjacent to the first row;
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- detect logic to configure the memory device in response to an indication that repeated access to the first row exceeds a threshold;
- row hammer response logic of the memory device, in response to the indication and prior to receipt of an expected targeted refresh command from an associated memory controller, to restrict access to the first bank for access other than a targeted refresh, to prepare for receipt of the targeted refresh command;
- and
- access logic to service a memory access command from the memory controller prior to receipt of the targeted refresh command, including the access logic to access the second bank in response to the memory access command, the access logic further to perform the targeted refresh of the second row in response to the targeted refresh command received by the memory device from the memory controller after the memory access command.
3 more elements
A method at a memory device by logic of the memory device, the method comprising:
- configuring the memory device in response to an indication that repeated access to a first row exceeds a threshold, wherein the memory device comprises:
- a first bank including the first row and a second row physically adjacent to the first row;
- and
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- restricting, in response to the indication and prior to receipt of an expected targeted refresh command from an associated memory controller, access to the first bank for access other than a targeted refresh, to prepare for receipt of the targeted refresh command;
- servicing a memory access command from the memory controller prior to receipt of the targeted refresh command, including accessing the second bank in response to the memory access command;
- and
- performing the targeted refresh of the second row in response to the targeted refresh command received by the memory device from the memory controller after the memory access command.
5 more elements
A memory controller comprising:
- detect logic to receive an indication that repeated access to a first row of a memory device exceeds a threshold, wherein the memory device comprises:
- a first bank including the first row and a second row physically adjacent to the first row;
- and
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- command logic to configure the memory device in response to the indication and prior to sending a targeted refresh command for the second row, wherein the memory device, in response to the indication and prior to receipt of the targeted refresh command, to restrict access to the first bank for access other than the targeted refresh to prepare for receipt of the targeted refresh command, the command logic further to send a memory access command prior to the targeted refresh command, wherein the memory device is to access the second bank to service the memory access command, the command logic further to send the targeted refresh command to the memory device after the memory access command is sent, wherein the memory device is to perform the targeted refresh of the second row in response to the targeted refresh command.
2 more elements
A method at a memory controller, the method comprising:
- receiving an indication that repeated access to a first row of a memory device exceeds a threshold, wherein the memory device comprises:
- a first bank including the first row and a second row physically adjacent to the first row;
- and
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- configuring the memory device in response to the indication and prior to sending a targeted refresh command for the second row, wherein the memory device, in response to the indication and prior to receipt of the targeted refresh command, to restrict access to the first bank for access other than the targeted refresh to prepare for receipt of the targeted refresh command;
- sending a memory access command prior to the targeted refresh command, wherein the memory device is to access the second bank to service the memory access command;
- and
- sending the targeted refresh command to the memory device after the memory access command is sent, wherein the memory device is to perform the targeted refresh of the second row in response to the targeted refresh command.
5 more elements
Dependencies are inferred from the claim text.