Programming method, reading method and operating system for memory
AssigneeMacronix International Co., Ltd.
InventorsChien-Hsin Liu, Su-Chueh Lo, Kuen-Long Chang, Ken-Hui Chen, Chun-Hsiung Hung
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Abstract
A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.
Claims17
A programming method for a memory, comprising:
- providing a data;
- performing a parity generation to obtain an error-correcting code (ECC);
- and
- programming the memory to record the data and the error-correcting code;
- wherein the data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1, and
- the error-correcting code resulted from the parity generation is transformed after performing the parity generation, such that the hamming distance between two codes corresponding to two adjacent threshold voltage states in the error-correcting code resulted from the parity generation is 1.
A reading method for a memory, comprising:
- reading a data and an error-correcting code recorded in the memory;
- performing a syndrome generation on the data;
- and
- performing a correction on the data according to an output of the syndrome generation;
- wherein the data is transformed before performing the syndrome generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the syndrome generation is 1, and
- the data outputted from the correction is transformed, such that the hamming distance between two codes corresponding to two adjacent threshold voltage states in the data outputted from the correction is 1.
An operating system for programming a memory, comprising:
- an inputting unit for providing a data;
- a parity generation unit for performing a parity generation to obtain an error-correcting code (ECC);
- and
- a transforming unit for transforming the data before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1,
- wherein the transforming unit is further for transforming the error-correcting code resulted from the parity generation after performing the parity generation, such that the hamming distance between two codes corresponding to two adjacent threshold voltage states in the error-correcting code resulted from the parity generation is 1.
Dependencies are inferred from the claim text.