Pre-patterned hard mask for ultrafast lithographic imaging
AssigneeIntel Corporation
InventorsRobert L. Bristol, Paul A. Nyhus, Charles H. Wallace
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Abstract
A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.
Claims20
An intermediate for use in a method of fabricating a substrate, comprising:
- a substrate;
- a hardmask layer on said substrate;
- and
- a cross grating formed on said hardmask layer, said cross grating comprising a first patterned layer and a second patterned layer;
- wherein:
- said first patterned layer is present on said hardmask layer;
- said second patterned layer is on said first patterned layer;
- and
- said first and second patterned layers intersect to form regions in which least a portion of said hardmask layer is exposed.
Dependencies are inferred from the claim text.