Assist feature for a photolithographic process

A lithographic mask comprising:

• a mask substrate;
• a reflective structure disposed on the mask substrate;
• and
• an absorptive layer formed on the reflective structure,
• wherein the mask includes a printing feature region with a first feature within a resolution of a radiation to be applied to the lithographic mask,
• wherein the mask includes a sub-resolution assist feature (SRAF) region with a second feature less than the resolution of the radiation to be applied to the lithographic mask,
• wherein the absorptive layer has a first thickness in the printing feature region and a second thickness in the SRAF region, and
• wherein the first thickness and the second thickness are different.

A lithographic mask comprising:

• a mask substrate;
• a reflective structure disposed on the mask substrate;
• and
• an absorptive layer formed on the reflective structure,
• wherein the mask includes a printing feature region, an assist feature region, and a third region that is neither a printing feature region nor an SRAF region,
• wherein the absorptive layer has a first thickness in the printing feature region, a second thickness in the assist feature region, and a third thickness in the third region, and
• wherein the first, second, and third thicknesses are different.