Integrated dielectric waveguide and semiconductor layer and method therefor

A method comprising:

• providing a dielectric waveguide structure disposed on a first substrate (210), the dielectric waveguide structure comprising;
• (a) a first waveguide core (214), the first waveguide core having a first refractive index;
• and
• (b) a first dielectric layer (216), the first dielectric layer having a second refractive index that is lower than the first refractive index, the first waveguide core being between the first substrate and the first dielectric layer;
• providing a second substrate comprising a handle wafer (414), a semiconductor layer (422), and a second dielectric layer (218) having a third refractive index that is lower than the first refractive index;
• bonding the first dielectric layer and the second dielectric layer at a bonded interface (220) to collectively define a cladding layer (222) for the first waveguide core, wherein the first waveguide core and a first region (604) of the semiconductor layer are optically coupled through the cladding layer;
• and
• removing the handle wafer.