Nano-ring gate electrode nanochannels
AssigneeInternational Business Machines Corporation
InventorsBinquan Luan, Sung-wook Nam
Life of this patent
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Abstract
A technique includes providing a nanodevice. A gate electrode structure has nanochannels with a first end connected to a first common trench and a second end connected to a second common trench. A gate electrode extends laterally as a continuous line on the gate electrode structure and is formed in each of the nanochannels. The gate electrode forms a separate nano-ring electrode around a partial circumference inside each of the nanochannels. The gate electrode is parallel to the first and second common trenches and is perpendicular to the nanochannels.
Claims12
A method of providing a nanodevice, the method comprising:
- providing a gate electrode structure having nanochannels with a first end connected to a first common trench and a second end connected to a second common trench;
- and
- providing a gate electrode which extends laterally as a continuous line on the gate electrode structure and is formed in each of the nanochannels, wherein the gate electrode forms a separate nano-ring electrode around a partial circumference inside each of the nanochannels;
- wherein the gate electrode is parallel to the first and second common trenches and is perpendicular to the nanochannels.
A method of controlling biomolecules in a nanodevice, the method comprising:
- providing a gate electrode structure having a nanochannel with a first end connected to a first common trench and a second end connected to a second common trench;
- providing a gate electrode which extends laterally as a continuous line on the gate electrode structure and is formed in the nanochannel, wherein the gate electrode forms a nano-ring electrode around a partial circumference inside of the nanochannel;
- wherein the gate electrode is parallel to the first and second common trenches and is perpendicular to the nanochannel;
- and
- trapping a biomolecule in the nanochannel by applying a first voltage to the gate electrode.
Dependencies are inferred from the claim text.