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AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsScott R. Messenger, Cory D. Cress, Michael K. Yakes, Jeffrey H. Warner, Robert J. Walters
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A device is described that includes sensors that are sensitive to displacement damage, and can be configured to display a characteristic damage curve. The sensors, or diodes, can be made of one or more semiconductor materials that are sensitive to displacement damage, and can be operated in dark illumination conditions. The sensors can have multiple shields of a specific or varied thickness. The shields can be formed in different configurations, though the shielding thickness can be designed to change the level of displacement damage absorbed by the sensors. The characteristic damage curve can provide a sensor response variable that displays a functional dependence on displacement damage. For example, the characteristic damage curve can provide a sensor response variable that is one or more currents measured at one or more fixed voltages, or one or more voltages measured at one or more fixed currents.
A device, comprising one or more sensors that are sensitive to displacement damage, wherein the device is configured to display a characteristic damage curve, and wherein the one or more sensors are comprised of one or more layers of semiconductor material, wherein the one or more layers of semiconductor material comprise an emitter layer and a base layer, wherein each of the one or more layers comprise one or more controls that affect the device performance and the device response to displacement damage, wherein the one or more controls comprise dopant species, doping level, polarity, and layer thickness.
A method, comprising the step of determining a displacement damage dose of a displacement damage dose device based on a characteristic curve of the displacement damage dose device, wherein an energy dependence of the displacement damage dose device response correlates with a nonionizing energy loss of the displacement damage dose device, wherein the displacement damage dose device comprises one or more sensors that are sensitive to displacement damage, wherein the device is configured to display a characteristic damage curve, and wherein the one or more sensors are comprised of one or more layers of semiconductor material, wherein the one or more layers of semiconductor material comprise an emitter layer and a base layer, wherein each of the one or more layers comprise one or more controls that affect the device performance and the device response to displacement damage, wherein the one or more controls comprise dopant species, doping level, polarity, and layer thickness.
Dependencies are inferred from the claim text.