Process for the production of multicrystalline silicon ingots by controlling the position of the melt surface during growth by the induction method

Abstract

A process for the production of multicrystalline silicon ingots by the induction method comprises charging a silicon raw material into the melting chamber of a cooled crucible enveloped by an inductor, forming a melt surface, and melting, wherein the mass rate of charging the silicon raw material and the speed of pulling the ingot are set such that provide for the melt surface position below the upper plane of the inductor but not lower than ⅓ of the height thereof and the melt surface is kept at the same level. In doing this the melt surface position is kept at the same level by maintaining one of the output parameters of the inductor feed within a predetermined range. The process provides for casting multicrystalline silicon ingots suitable for solar cell fabrication and it is notable for higher efficiency and lower specific energy consumption.

Dependencies are inferred from the claim text.