Apparatus and method for improving wafer uniformity

A semiconductor wafer processing tool, comprising:

• a semiconductor wafer processing chamber, the semiconductor wafer processing chamber including a vacuum sealable chamber interior;
• a semiconductor processing tool gas flow manifold outside the vacuum sealable chamber interior, the gas flow manifold including:
• a manifold body, and
• a plurality of manifold gas flow paths extending from a first side of the manifold body to a second side of the manifold body, wherein:
• the manifold body is installed in the semiconductor processing tool such that gas flows through the manifold body from the first side to the second side,
• the manifold gas flow paths are individually adjustable from outside the vacuum sealable chamber interior to alter gas flow characteristics through the manifold body by the insertion of an orifice into a corresponding one of the manifold gas flow paths, the orifice comprising,
• an orifice body, and
• a hole in the orifice body allowing for process gas flow through the hole and
• a process gas dispersion device, including:
• a first side of the gas dispersion device, wherein the first side of the gas dispersion device is fluidically connected with the gas flow paths exiting the second side of the manifold body, and
• a second side of the gas dispersion device, wherein the second side of the gas dispersion device is inside the vacuum sealable chamber interior and comprises features for emission of process gas into the vacuum sealable chamber interior.

A method for tuning on-wafer uniformity in semiconductor wafer processing, the method comprising:

• a) applying process gas to a semiconductor wafer inside a semiconductor processing chamber, wherein process gas enters the semiconductor processing chamber through a plurality of gas flow paths extending from a first side of a manifold body to a second side of the manifold body, wherein the first side of the manifold body is outside the semiconductor processing chamber, and gas flows through the manifold body from the first side to the second side;
• b) measuring the uniformity of the semiconductor wafer;
• and
• c) adjusting, from the first side of the manifold body, the gas flow characteristics through at least one of the gas flow paths in the manifold body by the insertion an orifice into a corresponding one of the manifold gas flow paths, the orifice comprising:
• an orifice body, and
• a hole in the orifice body allowing for process gas flow through the hole.