Microwave introducing mechanism, microwave plasma source and microwave plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Yuki Osada, Shigeru Kasai, Hiroyuki Miyashita
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsTaro Ikeda, Yuki Osada, Shigeru Kasai, Hiroyuki Miyashita
Estimating the term…
The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.
A microwave introducing mechanism, provided in a microwave transmission line through which a microwave outputted from a microwave output unit of a microwave plasma source is transmitted, for introducing the microwave into a chamber, the microwave plasma source being configured to generate a microwave plasma in the chamber, the mechanism comprising:
A microwave plasma source which converts a gas supplied into a chamber to a plasma by introducing a microwave into the chamber, the microwave plasma source comprising:
A plasma processing apparatus which performs a plasma process on a target substrate accommodated in a chamber, the apparatus comprising:
Dependencies are inferred from the claim text.