Material for anisotropic magnet and method of manufacturing the same
AssigneeDaido Steel Co., Ltd.
InventorsKeiko Hioki, Takao Yabumi, Hayato Hashino
Life of this patent
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Abstract
A material for anisotropic magnet, comprising, (1) a Pr-T-B—Ga-based composition containing Pr: 12.5 to 15.0 atomic percent, B: 4.5 to 6.5 atomic percent, Ga: 0.1 to 0.7 atomic percent, and the balance of T and inevitable impurities, wherein T is Fe or obtained by substituting Co for a portion of the Fe; and having, (2) a degree of magnetic alignment of 0.92 or more, wherein the degree of magnetic alignment is defined by remanence (Br)/saturation magnetization (Js); and (3) a crystal grain diameter of 1 μm or less.
Claims10
A hot plastically deformed anisotropic magnet having aligned axes of easy magnetization of crystal grains of the magnet, the anisotropic magnet comprising:
- (1) a T-based composition consisting of R, B, Ga, and a balance of T and inevitable impurities, wherein R is Pr or Pr that is optionally substituted with at least one element selected from the group consisting of Nd, Dy, and Tb;
- wherein an amount of R is 12.5 to 15 atomic percent;
- an amount of B is 4.5 to 6.5 atomic percent;
- and
- an amount of Ga is 0.1 to 0.7 atomic percent;
- wherein T is Fe or Fe partially substituted with Co, and having
- (2) a degree of magnetic alignment of 0.92 or more, wherein the degree of magnetization is defined by remanence (Br) / saturation magnetization (Js), wherein the remanence (Br) is 1.20 T or more, and a coercivity is 1600 kA/m or more;
- and
- (3) flattened crystal grains having a crystal grain diameter of 1 μm or less, and wherein R contains at least 50 atomic percent of Pr.
A hot plastically deformed anisotropic magnet having aligned axes of easy magnetization of crystal grains of the magnet, the anisotropic magnet comprising
- (1) a T-based composition consisting of R, B, Ga, at least one element selected from the group consisting of Cu and Al, and a balance of T and inevitable impurities, wherein R is Pr or Pr that is optionally substituted with at least one element selected from the group consisting of Nd, Dy, and Tb;
- wherein an amount of R is 12.5 to 15 atomic percent;
- an amount of B is 4.5 to 6.5 atomic percent;
- and
- an amount of Ga is 0.1 to 0.7 atomic percent;
- wherein T is Fe or Fe partially substituted with Co, and having (2) a degree of magnetic alignment of 0.92 or more, wherein the degree of magnetization is defined by remanence (Br) / saturation magnetization (Js), wherein the remanence is 1.20 T or more, and a coercivity is 1600 kA/m or more;
- and
- (3) flattened crystal grains having a crystal grain diameter of 1 μm or less,
- and wherein R contains at least 50 atomic percent of Pr.
Dependencies are inferred from the claim text.