Methods and structures of integrated MEMS-CMOS devices

A method for fabricating an integrated MEMS-CMOS device comprising:

• providing a substrate member having a surface region;
• forming a CMOS IC layer overlying the surface region, the CMOS IC layer having at least one CMOS device;
• forming a MEMS layer overlying the CMOS IC layer, the MEMS layer having a MEMS contact region that is electrically decoupled from the CMOS IC layer, a CMOS contact region, and at least one MEMS device, wherein the at least one MEMS device is electrically coupled to the MEMS contact region and at least one CMOS device is electrically coupled to the CMOS contact region, wherein the at least one MEMS device being is electrically decoupled from the CMOS device during formation of the MEMS contact region, wherein the MEMS contact region is configured at the top of the MEMS layer;
• wherein the CMOS contact region is configured at the top of the MEMS layer;
• wherein MEMS contact region and the CMOS contact region form a MEMS jumper contact region;
• and coupling the MEMS contact region and the CMOS contact region via a MEMS jumper structure being applied to the MEMS jumper contact region after the forming of the at least one MEMS device, the MEMS jumper structure electrically coupling the at least one MEMS device and the at least one CMOS device.