Tunneling devices and methods of manufacturing the same
AssigneesSamsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
InventorsJun-hee Choi, Won-jong Yoo, Seung-hwan Lee, Min-sup Choi, Xiao Chi Liu, Ji-a Lee
Life of this patent
Estimating the term…
Abstract
A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.
Claims21
A tunneling device comprising:
- a tunnel barrier layer;
- a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material;
- and
- a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material,
- wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer, and
- wherein the first material layer has a work function of about 5.0 eV to about 5.9 eV, and the second material layer has a work function of about 3.2 eV to about 4.0 eV.
A tunneling device comprising:
- a tunnel barrier layer;
- a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material;
- and
- a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material,
- wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer,
- the P-type 2D material comprises a P-type transition metal dichalcogenide (TMDC) material, and
- the N-type 2D material comprises an N-type transition metal dichalcogenide (TMDC) material.
A tunneling device comprising:
- a tunnel barrier layer;
- a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material;
- and
- a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material,
- wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer,
- the P-type 2D material comprises one of WSe2, NbSe2, and GaSe, and
- the N-type 2D material comprises one of MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, and GaS.
A method of manufacturing a tunneling device, comprising:
- forming a first material layer on a substrate, the first material layer including a first conductivity type two-dimensional (2D) material;
- forming a tunnel barrier layer on the first material layer;
- and
- forming a second material layer on the tunnel barrier layer, the second material layer including a second conductivity type 2D material,
- wherein the forming a first material layer forms the first material layer to have a work function of about 5.0 eV to about 5.9 eV, and
- the forming a second material layer forms the second material layer to have a work function of about 3.2 eV to about 4.0 eV.
Dependencies are inferred from the claim text.