Method of making flexible, foldable, and stretchable devices
AssigneeWayne State University
InventorsYong Xu, Hongen Tu, Eric G R Kim, Jessin K. John
Life of this patent
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Abstract
A method of making a flexible, foldable, stretchable electronic device. The method includes deposition of a polymer layer, such as parylene C, to impart flexibility to the device. The device overcomes the limitations of related flexible electronics schemes by employing established silicon-on-insulator complementary metal-oxide-semiconductor technology with a flexible enclosure. Devices made in such a way may be used in a wide variety of applications including incorporation into medical devices.
Claims20
A method of making a flexible device comprising:
- providing a silicon-on-insulator wafer comprising a device layer having at least one silicon island and at least one metal trace, the device layer being posited on a buried oxide layer, the buried oxide layer being posited on a silicon substrate layer;
- depositing a first polymer layer over the silicon-on-insulator wafer, the first polymer layer being above and in contact with the at least one silicon island and the at least one metal trace;
- forming at least one etching windows through the first polymer layer, the device layer, and the buried oxide layer;
- using an etchant through the at least one etching window to degrade the silicon substrate layer;
- depositing a second polymer layer to seal the at least one etching window and conformally over the silicon substrate layer and the silicon-on-insulator wafer;
- and
- removing the silicon substrate layer.
A flexible device made by a method comprising:
- providing a silicon-on-insulator wafer comprising a device layer having at least one silicon island and at least one metal trace, the device layer being posited on a buried oxide layer, the buried oxide layer being posited on a silicon substrate layer;
- depositing a first polymer layer over the silicon-on-insulator wafer, the first polymer layer being above and in contact with the at least one silicon island and the at least one metal trace;
- forming at least one etching windows through the first polymer layer, the device layer, and the buried oxide layer;
- using an etchant through the at least one etching windows to degrade the silicon substrate layer;
- depositing a second polymer layer conformally over the silicon substrate layer and the silicon-on-insulator wafer;
- and
- removing the silicon substrate layer.
A method of making a flexible device comprising:
- providing a wafer comprising a silicon substrate layer;
- depositing a metal layer onto the silicon substrate layer;
- patterning the metal layer to define a patterned substrate layer;
- forming a first polymer layer by chemical vapor deposition on the patterned substrate layer;
- etching the silicon substrate layer to form a channel mold to define a first etching step using an etchant;
- depositing a second polymer layer to form a device channel from the channel mold;
- etching the silicon substrate layer to form at least one silicon island to define a second etching step.
Dependencies are inferred from the claim text.