Hybrid plasma-semiconductor transistors, logic devices and arrays

A flexible hybrid plasma semiconductor device, comprising:

• a thin and flexible semiconductor base layer;
• a plurality of sub-emitter regions diffused into said thin and flexible base layer forming a plurality of pn-junctions;
• an insulator layer upon one side of said thin and flexible semiconductor base layer and said emitter region;
• base and sub-emitter electrodes isolated from each other by said insulator layer and electrically contacting said thin and flexible semiconductor base layer and said sub-emitter regions through said insulator layer;
• a thin and flexible collector layer upon an opposite side of said thin and flexible semiconductor base layer;
• a microcavity formed in said thin and flexible collector layer aligned with said plurality of emitter regions;
• and
• collector electrodes arranged to sustain a microplasma within said microcavity.

A flexible hybrid plasma semiconductor device, comprising:

• a thin and flexible semiconductor base layer;
• an emitter region diffused into said thin and flexible base layer forming a pn-junction;
• an insulator layer upon one side of said thin and flexible semiconductor base layer and said emitter region;
• base and emitter electrodes isolated from each other by said insulator layer and electrically contacting said thin and flexible semiconductor base layer and said emitter region through said insulator layer;
• a thin and flexible collector layer attached to another said of side of said thin and flexible semiconductor base layer;
• a plurality of microcavities formed in said thin and flexible collector layer aligned with said emitter region;
• and
• collector electrodes arranged to sustain separate microplasmas within said plurality of microcavities.