Electron beam irradiation method and scanning electronic microscope
AssigneeHitachi High-Technologies Corporation
InventorsKinya Kobayashi, Toshiyuki Yokosuka, Chahn Lee
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AssigneeHitachi High-Technologies Corporation
InventorsKinya Kobayashi, Toshiyuki Yokosuka, Chahn Lee
Estimating the term…
Provided is an electron beam scanning method for forming an electric field for appropriately guiding electrons emitted from a pattern to the outside of the pattern, and also provided is a scanning electron microscope. When an electron beam for forming charge is irradiated to a sample, a first electron beam is irradiated to a first position (1) and a second position (2) having the center (104) of a pattern formed on the sample as a symmetrical point, and is then additionally irradiated to two central positions (3, 4) between the first and second irradiation position, the two central positions (3, 4) being on the same radius centered on the symmetrical point as are the first and second positions. Further, after that, the irradiation of the first electron beam to the central positions between existing scanning positions on the radius is repeated.
An electron beam irradiation method in which a sample is irradiated with a first electron beam and charged and measurement or inspection of the sample is performed based on electrons obtained by scanning with a second electron beam to the charged sample, the method comprising the steps of:
A scanning electron microscope comprising:
Dependencies are inferred from the claim text.