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US 9,257,184 B2Granted
Nonvolatile memory systems with embedded fast read and write memories
AssigneeGreenthread, LLC
InventorG. R. Mohan Rao
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory system is described with novel architecture coupling nonvolatile storage memory with random access volatile memory. New commands are included to enhance the read and write performance of the memory system.
Claims16
A nonvolatile memory system comprising:
- a nonvolatile memory for storage of digital information in addressable locations arranged in multiple blocks for access, wherein reading of any portion of the digital information in a given block from an associated addressable location and modification thereof for storage back in the memory in the same addressable location requires writing of the modified digital information into a new physical location mapped to the same associated addressable location;
- a volatile random access memory for read and write operations;
- and
- wherein the coupled volatile random access memory and nonvolatile memory for storage are controlled by one or more controllers, the one or more controllers controlling the volatile and nonvolatile memories to:
- perform a read operation on the portion of the digital information to be read and retrieving and storing such from the given block at the associated addressable location, wherein any portion of the stored retrieved digital information can be accessed from the volatile random access memory,
- perform a read operation from the volatile memory of any portion or all of the stored digital information in the volatile memory,
- perform a write operation on any portion of the accessed read digital information from the volatile memory back to the same physical location in the volatile memory for storage therein, and
- write the digital information stored in the volatile memory back to the nonvolatile memory at a different physical location with the same associated address from which it was read.
5 more elements
The nonvolatile memory system of claim2 wherein the nonvolatile memory for storage is a ferroelectric memory.
Dependencies are inferred from the claim text.