Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device, comprising:

• a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked;
• a block insulating film provided on a side surface of a hole penetrating the stacked structure from its top surface to the lowermost control gate electrode layer with respect to a stacking direction of the stacked structure;
• an organic molecular layer having a first organic molecular film formed on an inner surface of the block insulating film containing first organic molecules, the organic molecular layer having a second organic molecular film formed on an inner surface of the first organic molecular film containing second organic molecules, the first organic molecule having a charge storing unit, the second organic molecule being an amphiphilic organic molecule;
• a tunnel insulating film provided on the inner surface of the organic molecular layer;
• and
• a semiconductor layer provided on the inner surface of the tunnel insulating film.