Method of fabricating piezoelectric material with selected c-axis orientation
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsJohn Larson, III, Sergey Mishin
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AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsJohn Larson, III, Sergey Mishin
Estimating the term…
In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (CN) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.
A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising:
A method of fabricating a bulk acoustic wave (BAW) resonator having a piezoelectric material consisting essentially of first and second components, the method comprising:
Dependencies are inferred from the claim text.