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US 9,231,167 B2Granted
Insulation structure for high temperature conditions and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung Ki Lee, Seog Moon Choi, Sang Hyun Shin
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Abstract
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.
Claims8
An insulation structure for high temperature conditions comprising:
- a substrate;
- a conductive pattern disposed on the substrate and having an upper surface divided into a first region and a second region, the conductive pattern partially exposes an upper surface of the substrate;
- and
- a metal oxide layer pattern disposed on the first region of the conductive pattern, the metal oxide layer pattern exposes an upper surface of the second region of the conductive pattern,
- wherein:
- a lower surface of the metal oxide layer pattern contacts an upper surface of the first region of the conductive pattern,
- the upper surface of the second region of the conductive pattern exposed externally from the metal oxide layer pattern provides a mounting area, and
- the metal oxide layer pattern is made of one selected from a group consisting of anodized Al, anodized Ti, and anodized Mg.
5 more elements
Dependencies are inferred from the claim text.