Method to improve semiconductor surfaces and polishing
AssigneesInternational Business Machines Corporation, ST Microelectronics SA
InventorsLindsey H. Hall, Michael Hatzistergos, Ahmet S. Ozcan, Filippos Papadatos, Yiyi Wang
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Abstract
A method of forming a semiconductor device is disclosed. The method including providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench; forming at least one liner layer on the at least one insulating layer; forming a nucleation layer on the at least one liner layer; forming a first metal film on a surface of the nucleation layer; etching the first metal film; and depositing a second metal film on the etched surface of the first metal film, the second metal film substantially forming an overburden above the trench.
Claims17
A method of forming a semiconductor device, the method comprising:
- providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench;
- forming at least one liner layer on the insulating layer;
- forming a nucleation layer on the at least one liner layer;
- forming a first metal film on a surface of the nucleation layer to fill the trench;
- and
- depositing a second metal film directly onto the first metal film, above an upper surface of the substrate and an upper surface of the trench to yield an overburden above the trench, the overburden including the second metal film positioned over and contacting the first metal film, wherein a material grain size of the second metal film is less than a material grain size of the first metal film.
A method of forming a semiconductor device, the method comprising:
- providing a substrate with at least one insulating layer disposed thereon, the at least one insulating layer including a trench;
- forming at least one liner layer on the at least one insulating layer;
- forming a nucleation layer on the at least one liner layer;
- forming a first metal film on a surface of the nucleation layer to fill the trench;
- etching the first metal film;
- and
- depositing a second metal film directly onto the etched surface of the first metal film, above an upper surface of the substrate and the upper surface of the trench, the second metal film substantially forming an overburden above the trench and contacting the first metal film,
- wherein depositing the second metal film includes a low-temperature deposition, and wherein a material grain size of the second metal film is less than a material grain size of the first metal film.
A method of forming a semiconductor device, the method comprising:
- forming at least one liner layer on an insulating layer of a semiconductor device, the insulating layer including a trench;
- forming a nucleation layer on the at least one liner layer;
- forming a first metal film on a surface of the nucleation layer to at least partially fill the trench, wherein an upper surface of the first metal film is partially positioned above an upper surface of the trench;
- and
- forming an overburden on the first metal film by performing a low temperature deposition of a second metal film directly onto the first metal film, wherein the overburden includes the second metal film positioned over and contacting the first metal film, wherein a material grain size of the second metal film is less than a material grain size of the first metal film.
Dependencies are inferred from the claim text.