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AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, S'Tile
InventorsJean-Paul Garandet, Virginie Brize, Etienne Pihan, Alain Straboni, Florent Dupont
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The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.
A process for forming a crystalline silicon layer comprising grains having a mean size of greater than or equal to 20 μm, the process comprising the steps of:
Dependencies are inferred from the claim text.