Method for treatment of deposition reactor
AssigneeASM IP Holding B.V.
InventorsSuvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
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Abstract
A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Claims14
A method of treating a deposition reactor, the method comprising the steps of:
- providing a metal halide chemistry, selected from the group consisting of titanium halides, tantalum halides, and niobium halides, to a reaction chamber of the deposition reactor;
- providing a metal CVD precursor selected from the group consisting of organometallic compound chemistry and aluminum CVD compound chemistry to the reaction chamber;
- forming a deposited doped metal film comprising one or more of B, C, Si N overlying a substrate;
- optionally removing the substrate;
- providing a treatment reactant chemistry to the reaction chamber;
- exposing the reaction chamber to the treatment reactant chemistry to mitigate formation of particles comprising decomposition products of the metal CVD precursor;
- and
- purging the reaction chamber.
A method of treating a deposition reactor, the method comprising the steps of:
- providing a metal halide chemistry, selected from the group consisting of titanium halides, tantalum halides, and niobium halides, to a reaction chamber for a period of time;
- after the step of providing a metal halide chemistry to a reaction chamber for a period of time, providing a treatment reactant chemistry to the reaction chamber for a period of time;
- and
- during or after providing a treatment reactant chemistry to the reaction chamber for a period of time, providing a metal CVD precursor chemistry to the reaction chamber to form a layer of doped metal,
- wherein use of the treatment reactant chemistry mitigates particle formation in the reaction chamber.
Dependencies are inferred from the claim text.